BBS3002 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1357
BBS3002
SANYO Semiconductors
DATA SHEET
BBS3002
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{4V drive.}
• _{Load switching applications.}
• _{Avalanche resistance guarantee.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--30V, L=100μH, IAV=--60A
*2 L≤100μH, Single pulse
Electrical Characteristics at Ta=25°C
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
--60
V
±20
V
--100
A
--400
A
90
W
150
°C
--55 to +150
°C
340 mJ
--60
A
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Marking : BS3002
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
Conditions
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
min
--60
--1.2
Ratings
Unit
typ
max
V
--1
μA
±10
μA
--2.6
V
Continued on next page.
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N1208QA MS IM TC-00001708 No. A1357-1/4