BBL4001 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1356
BBL4001
SANYO Semiconductors
DATA SHEET
BBL4001
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{Low ON-resistance.}
• _{Motor drive.}
• _{Avalanche resistance guarantee.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=30V, L=100μH, IAV=65A
*2 L≤100μH, Single pulse
Electrical Characteristics at Ta=25°C
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
60
V
±20
V
74
A
296
A
2.0
W
35
W
150
°C
--55 to +150
°C
370 mJ
65
A
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Marking : BL4001
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
min
60
Ratings
Unit
typ
max
V
1
μA
±10
μA
Continued on next page.
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the performance, characteristics, and functions of the described products in the independent state, and are
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customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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N2608QA TI IM TC-00001754 No. A1356-1/5