ATP613_11 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1903
ATP613
SANYO Semiconductors
DATA SHEET
ATP613
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{Reverse recovery time trr=60ns(typ.)}
• _{Input Capacitance Ciss=350pF(typ.)}
• _{Halogen free compliance}
• _{ON-resistance RDS(on)=1.55Ω(typ.)}
• _{10V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Source-to-Drain Diode Forward Current (DC)
Source-to-Drain Diode Forward Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=99V, L=5mH, IAV=5.5A
*2 L≤5mH, Single pulse (Fig.1)
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
EAS
IAV
Conditions
PW≤10μs, duty cycle≤1%
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
500
V
±30
V
5.5
A
19
A
5.5
A
19
A
70
W
150
°C
--55 to +150
°C
93 mJ
5.5
A
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP613
LOT No.
TL
2
1
3
0.8
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
Electrical Connection
2,4
1
3
http://semicon.sanyo.com/en/network
D1510QB TKIM TC-00002545 No. A1903-1/5