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5LN01SP_12 Datasheet, PDF (1/10 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications | |||
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Ordering number : EN6559A
5LN01SP
SANYO Semiconductors
DATA SHEET
5LN01SP
Features
⢠Low ON-resistance
⢠Ultrahigh-speed switching
⢠2.5V drive
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching
Applications
Speciï¬cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PWâ¤10μs, duty cycleâ¤1%
Storage Temperature
Tstg
This product is designed to âESD immunity < 200V*â, so please take care when handling.
* Machine Model
Ratings
Unit
50
V
±10
V
0.1
A
0.4
A
0.25
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7524-007
4.0
2.2 5LN01SP
5LN01SP-AC
Product & Package Information
⢠Package
: SPA
⢠JEITA, JEDEC
: SC-72
⢠Minimum Packing Quantity : 2,500 pcs./box, 500 pcs./bag
Marking
Electrical Connection
YB
3
0.4
LOT No.
0.5
0.4
0.4
1
123
2
1.3
1.3
3.0
3.8
1 : Source
2 : Drain
3 : Gate
SANYO : SPA
http://www.sanyosemi.com/en/network/
N2112 TKIM/82200 TS IM TA-2046 No.6559-1/10
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