55GN01MA_12 Datasheet, PDF (1/8 Pages) Sanyo Semicon Device – UHF Wide-band Low-noise Amplifier Applications

Ordering number : ENA1114A
55GN01MA
SANYO Semiconductors
DATA SHEET
55GN01MA
NPN Epitaxial Planar Silicon Transistor
UHF Wide-band Low-noise
Amplifier Applications
Features
• _{High cut-off frequency : fT=5.5GHz typ}
• _{High gain : ⏐S21e⏐}²_{=10dB typ (f=1GHz)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm²Ã—0.8mm)
Ratings
Unit
20
V
10
V
3
V
70 mA
400 mW
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7023A-009
2.0
0.15
3
55GN01MA-TL-E
0 to 0.08
1
2
0.65
0.3
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
Product & Package Information
• Package
: MCP
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
TL
Electrical Connection
3
1
LOT No.
ZD
LOT No.
2
http://semicon.sanyo.com/en/network
71112 TKIM/O2908AB MSIM TC-00001677 No. A1114-1/8