55GN01FA_12 Datasheet, PDF (1/9 Pages) Sanyo Semicon Device – UHF Wide-band Low-noise Amplifier Applications

Ordering number : ENA1113A
55GN01FA
SANYO Semiconductors
DATA SHEET
55GN01FA
NPN Epitaxial Planar Silicon Transistor
UHF Wide-band Low-noise
Amplifier Applications
Features
• _{High cut-off frequency : fT=5.5GHz typ}
• _{High gain : ⏐S21e⏐}²_{=11dB typ (f=1GHz)}
=19dB typ (f=400MHz)
• _{Ultrasmall package permitting applied sets to be small and slim}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
Unit
20
V
10
V
3
V
70 mA
250 mW
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7029A-002
1.4
0.25 0.1
3
55GN01FA-TL-H
0 to 0.02
1
0.45
2
0.2
12
3
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
Product & Package Information
• Package
: SSFP
• JEITA, JEDEC
: SC-81
• Minimum Packing Quantity : 8,000 pcs./reel
Packing Type: TL
Marking
ZD
TL
Electrical Connection
3
1
2
http://semicon.sanyo.com/en/network
71112 TKIM/D0308AB MSIM TC-00001681 No. A1113-1/9