55GN01CA_12 Datasheet, PDF (1/8 Pages) Sanyo Semicon Device – UHF Wide-band Low-noise Amplifier Applications

Ordering number : ENA1111A
55GN01CA
SANYO Semiconductors
DATA SHEET
55GN01CA
NPN Epitaxial Planar Silicon Transistor
UHF Wide-band Low-noise
Amplifier Applications
Features
• _{High cutoff frequency : fT=5.5GHz typ}
• _{High gain : ⏐S21e⏐}²_{=9.5dB typ (f=1GHz)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
Unit
20
V
10
V
3
V
70 mA
200 mW
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7013A-009
2.9
0.1
55GN01CA-TB-E
3
Product & Package Information
• Package
: CP
• JEITA, JEDEC
: SC-59, TO-236, SOT-23, TO-236AB
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TB
Marking
1
0.95
2
0.4
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
TB
Electrical Connection
3
1
2
ZW
http://semicon.sanyo.com/en/network
71112 TKIM/O2908AB MSIM TC-00001675 No. A1111-1/8