3LP01M_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : EN6139C
3LP01M
SANYO Semiconductors
DATA SHEET
3LP01M
Features
• _{Low ON-resistance}
• _{High-speed switching}
• _{2.5V drive}
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW≤10μs, duty cycle≤1%
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
Unit
--30
V
±10
V
--0.1
A
--0.4
A
0.15
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7023A-010
2.0
0.15
3
3LP01M-TL-E
3LP01M-TL-H
Product & Package Information
• Package
: MCP
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
0 to 0.08
1
2
0.65
0.3
1 : Gate
2 : Source
3 : Drain
SANYO : MCP
TL
Electrical Connection
3
1
LOT No.
XA
LOT No.
2
http://semicon.sanyo.com/en/network
71112 TKIM/40908 TIIM TC-00001304/32406PE MSIM TB-00002153/90100 TSIM TA-2006 No.6139-1/7