3LP01C_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : EN6645C
3LP01C
SANYO Semiconductors
DATA SHEET
3LP01C
Features
• _{Low ON-resistance}
• _{High-speed switching}
• _{1.8V drive}
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW≤10μs, duty cycle≤1%
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
Unit
--30
V
±10
V
--0.1
A
--0.4
A
0.25
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7013A-013
2.9
0.1
3LP01C-TB-E
3
3LP01C-TB-H
Product & Package Information
• Package
: CP
• JEITA, JEDEC
: SC-59, TO-236, SOT-23, TO-236AB
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
1
0.95
2
0.4
1 : Gate
2 : Source
3 : Drain
SANYO : CP
XA
TB
Electrical Connection
3
1
2
http://semicon.sanyo.com/en/network
62712 TKIM/32509 MSIM TC-00001903/72606/33006PE MSIM TB-00002203/90100 TSIM TA-1982 No.6645-1/7