3LN01S_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : EN6957B
3LN01S
SANYO Semiconductors
DATA SHEET
3LN01S
Features
• _{Low ON-resistance}
• _{Ultrahigh-speed switching}
• _{2.5V drive}
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW≤10μs, duty cycle≤1%
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
Unit
30
V
±10
V
0.15
A
0.6
A
0.15
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7013A-013
1.6
0.4
0.8
0.4
3LN01S-TL-E
Product & Package Information
• Package
: SMCP
• JEITA, JEDEC
: SC-75, SOT-416
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
1
2
3
0.1 MIN
1 : Gate
2 : Source
3 : Drain
SANYO : SMCP
YA
TL
Electrical Connection
3
1
2
http://semicon.sanyo.com/en/network
62712 TKIM/41006PE MSIM TB-00002189/60801 TSIM TA-1922 No.6957-1/7