2SK932_12 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – High-Frequency Low-Noise Amplifi er Applications

Ordering number : EN2841A
2SK932
SANYO Semiconductors
DATA SHEET
2SK932
N-Channel Junction Silicon FET
High-Frequency Low-Noise
Amplifier Applications
Applications
• _{AM tuner RF amplifier, low-noise amplifier}
Features
• _{Adoption of FBET process}
• _{Large | yfs |}
• _{Small Ciss}
• _{Ultralow noise figure}
• _{Ultrasmall-sized package permitting 2SK932-applied sets to be made smaller and slimmer}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Conditions
Ratings
Unit
15
V
--15
V
10 mA
50 mA
200 mW
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7013A-011
2.9
0.1
2SK932-22-TB-E
3
2SK932-23-TB-E
2SK932-24-TB-E
1
0.95
2
0.4
1 : Source
2 : Drain
3 : Gate
SANYO : CP
Product & Package Information
• Package
: CP
• JEITA, JEDEC
: SC-59, TO-236, SOT-23, TO-236AB
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TB
Marking
E
TB
Electrical Connection
3
12
http://www.sanyosemi.com/en/network/
80812 TKIM/51099TH (KT)/N148MO, TS No.2841-1/6