2SK4198FS_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1370C
2SK4198FS
SANYO Semiconductors
DATA SHEET
2SK4198FS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{ON-resistance RDS(on)=1.8Ω (typ.)}
• _{10V drive}
• _{Input capacitance Ciss=360pF (typ.)}
• _{Repetitive avalanche guarantee}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
600
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
IDc *1
IDpack *2
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
5
A
4
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
18
A
Allowable Power Dissipation
PD
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
2.0
W
30
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
55 mJ
Avalanche Current *5
IAV
4.5
A
Avalanche Energy (Repetition)
EAR
Limited only by maximum temperature Tch=150°C
3 mJ
Note :*1 Shows chip capability.
*2 Package limited.
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=5mH, IAV=4.5A (Fig.1)
*5 L≤5mH, Single pulse
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
4.7
2.54
2SK4198FS
Product & Package Information
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
1.47 MAX
0.8
123
2.54
2.54
2.76
0.5
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3FS
K4198
LOT No.
1
3
http://www.sanyosemi.com/en/network/
O1712 TKIM TC-00002825/70710 TKIM TC-00002401/31010 TKIM TC-00002278/N2608QB MSIM TC-00001732 No. A1370-1/7