2SK4177_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA0869A
2SK4177
SANYO Semiconductors
DATA SHEET
2SK4177
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{ON-resistance RDS(on)=10Ω(typ.)}
• _{10V drive}
• _{Input capacitance Ciss=380pF (typ.)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=50V, L=20mH, IAV=2A (Fig.1)
*2 L≤20mH, single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
1500
V
±20
V
2
A
4
A
80
W
150
°C
--55 to +150
°C
41 mJ
2
A
Package Dimensions
unit : mm (typ)
7535-001
10.0
4.5
1.3
4
2SK4177-DL-1E
8.0
Product & Package Information
• Package
: TO-263-2L
• JEITA, JEDEC
: SC-83, TO-263
• Minimum Packing Quantity : 800 pcs./reel
Packing Type: DL
Marking
K4177
1 23
1.27
0.8
2.54
2.54
5.3
0.254
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
DL
Electrical Connection
2, 4
1
LOT No.
SANYO : TO-263-2L
3
http://www.sanyosemi.com/en/network/
D0512 TKIM TC-00002833/31208QB TIIM TC-00001270 No. A0869-1/7