2SK4125_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA0747B
2SK4125
SANYO Semiconductors
DATA SHEET
2SK4125
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{ON-resistance RDS(on)=0.47Ω (typ.)}
• _{Input capacitance Ciss=1200pF (typ.)}
• _{10V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
600
V
Gate-to-Source Voltage
Drain Current (DC)
VGSS
ID
±30
V
17
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
52
A
Allowable Power Dissipation
PD
Tc=25°C (SANYO’s ideal heat dissipation condition)*1
2.5
W
170
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *2
EAS
78.8 mJ
Avalanche Current *3
IAV
17
A
*1 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*2 VDD=50V, L=500μH, IAV=17A (Fig.1)
*3 L≤500μH, single pulse
Package Dimensions
unit : mm (typ)
7539-002
2SK4125-1E
15.6
4.8
1.5
3.2
7.0
Product & Package Information
• Package : TO-3P-3L
• JEITA, JEDEC : SC-65, TO-247, SOT-199
• Minimum Packing Quantity : 30 pcs./magazine
Marking
Electrical Connection
2
2.0
3.0
1.0
123
5.45
5.45
13.6
0.6
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3P-3L
K4125
LOT No.
1
3
http://semicon.sanyo.com/en/network
62012 TKIM/D0507 TIIM TC-00001053/51607QB TIIM TC-00000701 No. A0747-1/7