2SK4124_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA0746C
2SK4124
SANYO Semiconductors
DATA SHEET
2SK4124
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{Low ON-resistance, low input capacitance, ultrahigh-speed switching}
• _{Adoption of high reliability HVP process}
• _{Avalanche resistance guarantee}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
500
V
Gate-to-Source Voltage
Drain Current (DC)
VGSS
ID
±30
V
20
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
60
A
Allowable Power Dissipation
PD
Tc=25°C (SANYO’s ideal heat dissipation condition)*1
2.5
W
170
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
110 mJ
Avalanche Current *2
IAV
20
A
*1 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*2 VDD=50V, L=500μH, IAV=20A (Fig.1)
*3 L≤500μH, single pulse
Package Dimensions
unit : mm (typ)
7539-002
15.6
4.8
1.5
2SK4124-1E
3.2
7.0
Product & Package Information
• Package : TO-3P-3L
• JEITA, JEDEC : SC-65, TO-247, SOT-199
• Minimum Packing Quantity : 30 pcs./magazine
Marking
Electrical Connection
2
13.6
K4124
LOT No.
2.0
3.0
1.0
123
5.45
5.45
0.6
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3P-3L
1
3
http://semicon.sanyo.com/en/network
51612 TKIM TC-00002752/40412 TKIM TC-00002745/D0507 TIIM TC-00001052/41807QB TIIM TC-00000661 No. A0746-1/7