2SK4066 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

Ordering number : ENA0225A
2SK4066
SANYO Semiconductors
DATA SHEET
2SK4066
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• Low ON-resistance.
• _{Load switching applications.}
• _{Avalanche resistance guarantee.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note : *1 VDD=30V, L=200µH, IAV=70A
*2 L≤200µH, Single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW≤10µs, duty cycle≤1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : K4066
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS= ±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=50A
ID=50A, VGS=10V
ID=50A, VGS=4V
Ratings
Unit
60
V
±20
V
100
A
400
A
1.65
W
90
W
150
°C
--55 to +150
°C
850
mJ
70
A
min
60
1.2
51
Ratings
Unit
typ
max
V
1 µA
±10 µA
2.6
V
85
S
3.6
4.7 mΩ
4.7
6.6 mΩ
Continued on next page.
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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71206 / 41006 MS IM TB-00002121 / 12506QA MS IM TB-00002052 No. A0225-1/5