2SK3748_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – High-Voltage, High-Speed Switching Applications

Ordering number : EN8250B
2SK3748
SANYO Semiconductors
DATA SHEET
2SK3748
N-Channel Silicon MOSFET
High-Voltage, High-Speed Switching
Applications
Features
• _{Low ON-resistance, low input capacitance, ultrahigh-speed switching}
• _{High reliability (Adoption of HVP process)}
• _{Attachment workability is good by Mica-less package}
• _{Avalanche resistance guarantee}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VDSS
VGSS
ID*
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
*Shows chip capability
*1 VDD=50V, L=20mH, IAV=4A (Fig.1)
*2 L≤20mH, single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
1500
V
±20
V
4
A
8
A
3.0
W
65
W
150
°C
--55 to +150
°C
165 mJ
4
A
Package Dimensions
unit : mm (typ)
7538A-002
15.5
3.6
5.5
3.0
2SK3748-1E
Product & Package Information
• Package
: TO-3PF-3L
• JEITA, JEDEC
: SC-94
• Minimum Packing Quantity : 30 pcs./magazine
Marking
Electrical Connection
2
2.0
2.0
4.0
0.75
123
5.45
5.45
2.0
0.9
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3PF-3L
K3748
LOT No.
1
3
http://semicon.sanyo.com/en/network
52312 TKIM TC-00002764/72905 MSIM TB-00001688 / 31005QB TSIM TB-00001272 No.8250-1/7