2SK3746_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – High-Voltage, High-Speed Switching Applications

Ordering number : EN8283A
2SK3746
SANYO Semiconductors
DATA SHEET
2SK3746
N-Channel Silicon MOSFET
High-Voltage, High-Speed Switching
Applications
Features
• _{Low ON-resistance, low input capacitance, ultrahigh-speed switching}
• _{High reliability (Adoption of HVP process)}
• _{Avalanche resistance guarantee}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
*1 VDD=50V, L=20mH, IAV=2A (Fig.1)
*2 L≤20mH, single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
1500
V
±20
V
2
A
4
A
2.5
W
110
W
150
°C
--55 to +150
°C
41 mJ
2
A
Package Dimensions
unit : mm (typ)
7539-002
15.6
4.8
1.5
2SK3746-1E
3.2
7.0
Product & Package Information
• Package
: TO-3P-3L
• JEITA, JEDEC : SC-65, TO-247, SOT-199
• Minimum Packing Quantity : 30 pcs./magazine
Marking
Electrical Connection
2
K3746
13.6
LOT No.
2.0
3.0
1.0
123
5.45
5.45
0.6
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3P-3L
1
3
http://semicon.sanyo.com/en/network
52312 TKIM TC-00002762/62005QB MSIM TB-00001345 No.8283-1/7