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2SK3745LS_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – High-Voltage, High-Speed Switching Applications
Ordering number : EN8635A
2SK3745LS
SANYO Semiconductors
DATA SHEET
2SK3745LS
N-Channel Silicon MOSFET
High-Voltage, High-Speed Switching
Applications
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching
• High reliability (Adoption of HVP process)
• Micaless package facilitating mounting
• Avalanche resistance guarantee
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VDSS
VGSS
ID*
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
*Shows chip capability
*1 VDD=50V, L=20mH, IAV=2A (Fig.1)
*2 L≤20mH, single pulse
Tc=25°C
Conditions
Ratings
Unit
1500
V
±20
V
2
A
4
A
2.0
W
35
W
150
°C
--55 to +150
°C
41 mJ
2
A
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
4.7
2.54
2SK3745LS-1E
Product & Package Information
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
1.47 MAX
0.8
123
2.54
2.54
2.76
0.5
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3FS
K3745
LOT No.
1
3
http://semicon.sanyo.com/en/network
52312 TKIM TC-00002761/N1505QB MSIM TB-00001890 No.8635-1/7