2SK3666_12 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – Low-Frequency General-Purpose Amplifier, Impedance Converter Applications

Ordering number : EN8158B
2SK3666
SANYO Semiconductors
DATA SHEET
2SK3666
N-Channel Junctin Silicon FET
Low-Frequency General-Purpose Amplifier,
Impedance Converter Applications
Applications
• _{Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications}
Features
• _{Small IGSS}
• _{Small Ciss}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Conditions
Ratings
Unit
30
V
--30
V
10 mA
10 mA
200 mW
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7013A-011
2.9
0.1
2SK3666-2-TB-E
3
2SK3666-3-TB-E
2SK3666-4-TB-E
1
0.95
2
0.4
1 : Source
2 : Drain
3 : Gate
SANYO : CP
Product & Package Information
• Package
: CP
• JEITA, JEDEC
: SC-59, TO-236, SOT-23, TO-236AB
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
JK
TB
Electrical Connection
3
12
http://semicon.sanyo.com/en/network
62012 TKIM/D2805GM IMMS TB-00001984 / 31505GB TSIM TA-100303 No.8158-1/6