2SK3352 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – P- Channel Silicon MOS FET DC-DC Converter

2SK3352
P- Channel Silicon MOS FET
DC-DC Converter
Features and Applications
• Low ON-state resistance.
• Very high - speed switching.
• 4V drive.
Absolute Maximum Ratings / Ta=25°C
Drain to Source Voltage
Gate to Source Voltage
VDSS
VGSS
Drain Current (DC)
ID
Drain Current (Pulse)
IDP PW≤10µs, duty cycle≤1%
Allowable power Dissipation
PD
Channel Temperature
Tc=25°C
Tch
Storage Temperature
Tstg
TENTATIVE
unit
30 V
±20 V
45 A
80 A
1.65 W
40 W
150 °C
--55 to +150 °C
Electrical Characteristics / Ta=25°C
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-oFF Delay Time
Fall Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Diode Forward Voltage
Marking : K3352
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA , VGS=0
VDS=30V , VGS=0
VGS=±16V , VDS=0
VDS=10V , ID=1mA
VDS=10V , ID=20A
ID=20A , VGS=10V
ID=10A , VGS=4.5V
VDS=10V , f=1MHz
VDS=10V , f=1MHz
VDS=10V , f=1MHz
See specified Test Circuit
VDS=10V, VGS=10V, ID=20A
IS=45A , VGS= 0
min typ max unit
30
V
1 µA
±10 µA
1.0
2.4
V
19
27
S
11
15 mΩ
15
21 mΩ
1400
pF
420
pF
210
pF
14
ns
530
ns
100
ns
150
ns
28
nC
4.6
nC
5
nC
1.0
1.2
V
Package Dimensions
SMP-FD (unit : mm)
10.2
4
4.5 _1.3
SMP-FA (unit : mm)
10.2
4
4.5
1.3
SMP(unit:mm)
10.2
4 _{30° 30°}
4.5
1.3
1 23
0.8
1.2
2.55
2.55
0to0.3
0.4
1.2
0.8
0.4
1 23
1.2
0.8
0.4
2.55
2.55
1 : Gate
2 : Drain
3 : Source
4 : Drain
1 : Gate
2.55
2.55
2 : Drain
3 : Source
4 : Drain
Specifications and information herin are subject to change without notice.
123
2.55
2.55
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
990915TM2fXHD