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2SK3284 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications
Ordering number : ENA0168
2SK3284
2SK3284
Features
• Low ON-resistance.
• Low Qg.
• Ultrahigh-speed switching.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Tc=25°C
Ratings
Unit
400
V
±30
V
10
A
40
A
50
W
150
°C
--55 to +150
°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
Ciss
Coss
Crss
Qg
td(on)
tr
td(off)
tf
VSD
ID=1mA, VGS=0V
VDS=320V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=6A
ID=6A, VGS=15V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=200V, VGS=10V, ID=10A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
IS=10A, VGS=0V
400
V
1.0 mA
±100 nA
3
4
V
2.9
5.8
S
0.43
0.55
Ω
1150
pF
350
pF
150
pF
40
nC
17
ns
30
ns
150
ns
50
ns
1.2
V
Note) Although the protection diode is contained between gate and source, be careful of handling enough.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11006QB MS IM TB-00002033 No. A0168-1/4