2SK3095LS Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

Ordering number : EN8624
2SK3095LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK3095LS ^{General-Purpose Switching Device}
Applications
Features
• Low ON-resistance.
• _{Low Qg.}
• _{Ultrahigh-Speed Switching Applications.}
• _{Avalanche resistance guarantee.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Enargy (Single Pulse) *1
Avalanche Current *2
*1 VDD=50V, L=5mH, IAV=5A
*2 L≤5mH, single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW≤10µs, duty cycle≤1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : K3095
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)
ID=1mA, VGS=0V
VDS=320V, VGS=0V
VGS= ±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2.8A
ID=2.8A, VGS=15V
Ratings
Unit
400
V
±30
V
5
A
20
A
2.0
W
25
W
150
°C
--55 to +150
°C
71.4
mJ
5
A
min
400
3.0
1.4
Ratings
Unit
typ
max
V
1.0 mA
±100 nA
4.0
V
2.8
S
0.92
1.2
Ω
Continued on next page.
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that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
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SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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N0806QB SY IM TC-00000313 No.8624-1/3