2SK2859 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

Ordering number:EN5851
N Channel Silicon MOSFET
2SK2859
Ultrahigh-Speed Switching Applications
Features
· Low On resistance.
· Ultrahigh-speed switching.
· 4V drive.
Package Dimensions
unit:mm
2149
[2SA2859]
8
5
1
4
5.0
0.595 1.27 0.43
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (1000²Ã—0.8mm)
1 : No Contact
2 : Source
3 : No Contact
4 : Gate
0.2 _{5 : Drain}
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
Ratings
Unit
100 V
±15 V
2A
8A
1.6 W
150 ˚C
–55 to +150 ˚C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1498TS (KOTO) TA-0859 No.5851-1/4