2SJ665_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : EN8590A
2SJ665
SANYO Semiconductors
DATA SHEET
2SJ665
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{ON-resistance RDS(on)1=59mΩ(typ.)}
• _{4V drive}
• _{Input capacitance Ciss=4200pF (typ.)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--30V, L=100μH, IAV=--27A (Fig.1)
*2 L≤100μH, single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
--100
V
±20
V
--27
A
--108
A
65
W
150
°C
--55 to +150
°C
48 mJ
--27
A
Package Dimensions
unit : mm (typ)
7535-001
Product & Package Information
• Package
: TO-263-2L
• JEITA, JEDEC
: SC-83, TO-263
• Minimum Packing Quantity : 800 pcs./reel
2SJ665-DL-1E
10.0
4.5
8.0
Packing Type: DL
Marking
1.3
4
J665
1 23
1.27
0.8
2.54
2.54
5.3
0.254
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
DL
Electrical Connection
2, 4
1
LOT No.
SANYO : TO-263-2L
3
http://semicon.sanyo.com/en/network
71112 TKIM TC-00002779/N1805QA MSIM TB-00001098 No.8590-1/7