2SJ629 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : EN9084A
2SJ629
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
2SJ629 ^{General-Purpose Switching Device}
Applications
Features
• _{Low ON-resistance.}
• _{Ultrahigh-speed switching.}
• _{1.8V drive.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (600mm²!0.8mm)
Tc=25°C
Ratings
Unit
--12
V
±8
V
--4.5
A
--18
A
1.3
W
3.5
W
150
°C
--55 to +150
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : MC
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
VGS=±6.4V, VDS=0V
VDS=--6V, ID=--1mA
VDS=--6V, ID=--2.2A
ID=--2.2A, VGS=--4.5V
ID=--1.1A, VGS=--2.5V
ID=--0.5A, VGS=--1.8V
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--12
--0.3
3.4
Ratings
Unit
typ
max
V
--10
µA
±10
µA
--1.0
V
5.7
S
75
98 mΩ
110
155 mΩ
150
225 mΩ
450
pF
100
pF
85
pF
15
ns
140
ns
58
ns
52
ns
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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82506 MS IM TC-00000118 / 82605PA MS IM TA-100585 No.9084-1/4