2SJ414 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : EN5367
2SJ414
SANYO Semiconductors
DATA SHEET
2SJ414
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{Low ON-state resistance.}
• _{Low-voltage drive.}
• _{Surface mount type device making the following possible.}
• _{Reduction in the number of manufacturing processes for 2SJ414-applied equipment.}
• _{High density surface mount applications.}
• _{Small size of 2SJ414-applied equipment.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
--60
V
±20
V
--18
A
--72
A
40
W
150
°C
--55 to +150
°C
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Symbol
Conditions
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
ID=--1mA, VGS=0V
IG=±100μA, VDS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
min
--60
±20
--1.0
Ratings
Unit
typ
max
V
V
--100
μA
±10
μA
--2.0
V
Continued on next page.
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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
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22410QA TK IM TA-0184 No. 5367-1/3