2SJ406 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – P- Channel Silicon MOS FET Very High-Speed Switching Applications

2SJ406
P- Channel Silicon MOS FET
Very High-Speed Switching Applications
Features and Applications
• Low ON-state resistance.
• Very high-speed switching.
• Low-voltage dreve.
• Micaless package facilitating easy mounting.
Absolute Maximum Ratings / Ta=25°C
Drain to Source Voltage
Gate to Source Voltage
Drain Current (D.C)
Drain Current (Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
VDSS
VGSS
ID
IDP PW≤10µS, dutycycle≤1%
PD ^Tc=25°C
Tch
Tstg
--200
±20
--12
--48
40
150
--55 to +150
Electrical Characteristics / Ta=25°C
Drain to Source Breakdown Voltage
Gate to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-oFF Delay Time
Fall Time
Diode Forward Voltage
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(OFF)
| yfs |
RDS(On)1
Ciss
Coss
Crss
td(On)
tr
td(Off)
tf
VSD
ID=--1mA , VGS=0
ID=±100µA , VGS=0
VDS=--200V , VGS=0
VGS=±16V , VDS=0
VDS=--10V , ID=--1mA
VDS=--10V , ID=--6A
ID=--5A , VGS=--4V
VDS=--20V , f=1MHz
VDS=--20V , f=1MHz
VDS=--20V , f=1MHz
See Specified Test
Circuit .
IS =--1.0A , VGS = 0
TENTATIVE
unit
V
V
A
A
W
°C
°C
min typ
--200
±20
--1.5
6.3 10.5
170
2400
540
260
40
120
720
310
--1.0
max unit
V
V
--100 µA
±10 µA
--2.5 V
S
230 _mΩ
pF
pF
pF
ns
ns
ns
ns
--1.5 V
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10uS
D.C≤1%
VDD=--100V
ID=--6A
RL=--16.7Ω
VOUT
P.G
50Ω
2SJ406
Elecrical Connection
D
G
S
Case Outline
10.0
φ3.2
TO-220 (unit:mm)
4.5
2.8
1.6
1.2
0.75
123
2.55
2.55
2.4
0.7
1 : Gate
2 : Drain
2.55
2.55
3 : Source
Specifications and information herein are subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
990929TM2fXHD