2SD1908 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – CRT Display Horizontal Deflection Output Applications

Ordering number : EN3971
NPN Epitaxial Planar Silicon Transistor
2SD1908
CRT Display Horizontal Deflection Output
Applications
Features
• Fast switching speed.
• Especially suited for use in high-definition CRT display :
VCC=6 to 12V.
• Wide ASO and highly resistant to breakdown.
Package Dimensions
unit: mm
2049B-TO-220MF
[2SD1908]
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tc=25°C
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Fall Time
ICBO
IEBO
hFE(1)
hFE(2)
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
tf
VCB=200V, IE=0
VEB=5V, IC=0
VCE=1V, IC=1A
VCE=1V, IC=5A
VCE=10V, IC=0.5A
IC=5A, IB=0.5A
IC=5A, IB=0.5A
IC=1mA, IE=0
IC=1mA, RBE=∞
IE=1mA, IC=0
IC=5A, IB1=–IB2=0.5A
E : Emitter
C : Collector
B : Base
SANYO : TO-220MF
Ratings
Unit
330
V
150
V
6
V
7
A
12
A
4
A
1.65
W
50
W
150
°C
–55 to +150
°C
Ratings
Unit
min typ max
100 µA
100 mA
15
10
50
10
40
MHz
1V
1.2 V
330
V
150
V
6
V
0.5 µs
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
11697YK (KOTO) 8-0537 No.3971-1/3