2SD1620_10 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – 1.5V, 3V Strobe Applications

Ordering number : EN1719C
2SD1620
SANYO Semiconductors
DATA SHEET
2SD1620 ^{NPN Epitaxial Planar Silicon Transistor}
1.5V, 3V Strobe Applications
Features
• Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted.
• Large current capacity and highly resistant to breakdown.
• _{Excellent linearity of hFE in the region from low current to high current.}
• _{Ultrasmall size supports high-density, ultrasmall-sized hybrid IC designs.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEX
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Mounted on a ceramic board (250mm²âœ•0.8mm)
Ratings
Unit
30
V
20
V
10
V
6
V
3
A
5
A
500 mW
1.3
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=20V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=3A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
min
140
Ratings
Unit
typ
max
100 nA
100 nA
210
200
MHz
30
pF
Continued on next page.
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the performance, characteristics, and functions of the described products in the independent state, and are not
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31010EA TK IM / 31005TN(PC)/21599TH (KT)/N1596TS(KOTO)8-7707/5277KI/3045MW, TS No.1719-1/4