2SC6065 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

Ordering number : EN8561
2SC6065
2SC6065 ^{NPN Triple Diffused Planar Silicon Transistor}
Switching Regulator Applications
Features
• _{High breakdown voltage.}
• _{High-speed switching.}
• _{Wide ASO.}
• _{Adoption of MBIT process.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤300µs, duty cycle≤10%
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
hFE3
Conditions
VCB=400V, IE=0A
VEB=5V, IC=0A
VCE=5V, IC=0.1A
VCE=5V, IC=0.7A
VCE=5V, IC=1mA
Ratings
Unit
500
V
400
V
8
V
1.5
A
3
A
0.7
A
0.9
W
150
°C
--55 to +150
°C
min
20
10
10
Ratings
typ
Unit
max
10 µA
10 µA
50
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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12006CB MS IM TB-00001637 No.8561-1/4