2SC5665 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – High-Frequency Low-Noise Amplifier and OSC Applications

Ordering number : ENN7351
2SC5665
NPN Epitaxial Planar Silicon Transistor
2SC5665
High-Frequency Low-Noise Amplifier
and OSC Applications
Features
Package Dimensions
• _{Low-noise use}
: NF=1.5dB typ (f=2GHz).
• _{High cut-off frequency : fT=6.5GHz typ (VCE=1V).}
: fT=11.2GHz typ (VCE=3V).
• _{Low operating voltage.}
unit : mm
2106A
[2SC5665]
0.75
0.3
0.6
3
0~0.1
1
2
0.2
0.5 0.5
1.6
0.1
1 : Base
2 : Emitter
3 : Collector
SANYO : SMCP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Marking : NK
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
Unit
9
V
4
V
2
V
70 mA
100 mW
150
°C
--55 to +150
°C
This product adopts a
high-frequency process.
Please be careful when
handling it beause it is
susceptible to static
electricity.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62503 TS IM TA-3753 No.7351-1/7