2SC5646A Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – UHF to S-Band Low-Noise Amplifier, OSC Applications

Ordering number : ENA1120
2SC5646A
SANYO Semiconductors
DATA SHEET
2SC5646A
NPN Epitaxial Planar Silicon Transistor
UHF to S-Band Low-Noise Amplifier,
OSC Applications
Features
• _Low-noise
: NF=1.5dB typ (f=2GHz).
• _{High cut-off frequency : fT=10GHz typ (VCE=1V).}
: fT=12.5GHz typ (VCE=3V).
• _{Low-voltage operation.}
• _{High gain}
: ⏐S21e⏐²=9.5dB typ (f=2GHz).
• Ultrasmall, slim flat-lead package (1.4mm✕0.8mm✕0.6mm).
• Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Marking : NF
Symbol
ICBO
IEBO
hFE
Conditions
VCB=5V, IE=0A
VEB=1V, IC=0A
VCE=1V, IC=5mA
Ratings
Unit
9
V
4
V
2
V
30 mA
100 mW
150
°C
--55 to +150
°C
min
100
Ratings
Unit
typ
max
1.0
μA
10
μA
160
Continued on next page.
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31710AB TK IM TC-00002250 No. A1120-1/7