2SC5551A_12 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – High-Frequency Medium-Output Amplifier Applications

Ordering number : ENA1118A
2SC5551A
SANYO Semiconductors
DATA SHEET
2SC5551A
NPN Epitaxial Planar Silicon Transistor
High-Frequency Medium-Output
Amplifier Applications
Features
• _{High fT : (fT=3.5GHz typ)}
• _{Large current : (IC=300mA)}
• _{Large allowable collector dissipation (1.3W max)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm²Ã—0.8mm)
Ratings
Unit
40
V
30
V
2
V
300 mA
600 mA
1.3
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
2SC5551AE-TD-E
2SC5551AF-TD-E
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
1
2
3
0.4
0.4
0.5
1.5
3.0
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
TD
RANK
Electrical Connection
2
1
3
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80812 TKIM/D0209AB TKIM TC-00002042 No. A1118-1/6