2SC5539A Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Amplifier and OSC Applications

Ordering number : ENA1097
2SC5539A
SANYO Semiconductors
DATA SHEET
2SC5539A
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Low-Noise Amplifier
Features
and OSC Applications
• _{Low noise}
: NF=1.1dB typ (f=1GHz).
• _{High gain}
: ⏐S21e⏐²=12dB typ (f=1GHz).
• _{High cut-off frequency : fT=7.5GHz typ.}
• Ultrasmall, slim flat-lead package (1.4mm✕0.8mm✕0.6mm).
• Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
When mounted on glass epoxy substrate
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Marking : ND
Symbol
ICBO
IEBO
hFE
fT
Cob
Cre
Conditions
VCB=10V, IE=0A
VEB=1V, IC=0A
VCE=5V, IC=30mA
VCE=5V, IC=30mA
VCB=5V, f=1MHz
VCB=5V, f=1MHz
Ratings
Unit
20
V
12
V
2
V
100 mA
150 mW
150
°C
--55 to +150
°C
min
90
6
Ratings
Unit
typ
max
1.0 μA
10 μA
200
7.5
GHz
0.85
1.3 pF
0.6
pF
Continued on next page.
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the performance, characteristics, and functions of the described products in the independent state, and are not
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customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
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O2109AB TK IM TC-00002101 No. A1097-1/6