2SC5420 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – Inverter Lighting Applications

Ordering number : EN5762
NPN Triple Diffused Planar Silicon Transistor
2SC5420
Inverter Lighting Applications
Features
• High breakdown voltage (VCBO=1000V).
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
Package Dimensions
unit: mm
2069B-SMP-FD
[2SC5420]
10.2
4.5
1.3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
VCBO
VCEO
VEBO
IC
ICP
PC
Tc=25°C
Junction Temperature
Tj
Storage Temperature
Tstg
1.2
0.8
2
1
3
2.55
2.55
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD
Ratings
Unit
1000
V
450
V
9
V
5
A
10
A
1.75
W
50
W
150
°C
–55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
C-E Saturation Voltage
B-E Saturation Voltage
DC Current Gain
Storage Time
Fall Time
ICBO
ICES
VCEO(SUS)
IEBO
VCE(sat)
VBE(sat)
hFE(1)
hFE(2)
tstg
tf
VCB=450V, IE=0
VCE=1000V, RBE=0
IC=100mA, IB=0
VEB=9V, IC=0
IC=2.5A, IB=0.5A
IC=2.5A, IB=0.5A
VCE=5V, IC=0.3A
VCE=5V, IC=2.0A
IC=2.5A, IB1=0.5A, IB2=–1.0A
IC=2.5A, IB1=0.5A, IB2=–1.0A
Ratings
Unit
min typ max
10 µA
1.0 mA
450
V
1.0 mA
1.0 V
1.5 V
30
40
50
10
2.5 µs
0.15 µs
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O1397TS (KOTO) TA-1037 No.5762-1/4