2SC5417 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – Inverter Lighting Applications

Ordering number : EN5817
NPN Triple Diffused Planar Silicon Transistor
2SC5417
Inverter Lighting Applications
Features
• High breakdown voltage.
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
Package Dimensions
unit: mm
2079B-TO220FI (LS)
[2SC5417]
10.0
3.2
4.5
2.8
0.9
1.2
0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
VCBO
VCEO
VEBO
IC
ICP
PC
Tc=25°C
Junction Temperature
Tj
Storage Temperature
Tstg
0.75
1 23
2.55
2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO220FI (LS)
Ratings
Unit
1200
V
600
V
9
V
3
A
6
A
2
W
25
W
150
°C
–55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
C-E Saturation Voltage
B-E Saturation Voltage
DC Current Gain
Storage Time
Fall Time
ICBO
ICES
VCEO(sus)
IEBO
VCE(sat)
VBE(sat)
hFE(1)
hFE(2)
tstg
tf
VCB=600V, IE=0
VCE=1200V, RBE=0
IC=100mA, IB=0
VEB=9V, IC=0
IC=1.5A, IB=0.3A
IC=1.5A, IB=0.3A
VCE=5V, IC=0.1A
VCE=5V, IC=1.0A
IC=1.5A, IB1=0.3A, IB2=–0.6A
IC=1.5A, IB1=0.3A, IB2=–0.6A
Ratings
Unit
min typ max
10 µA
1.0 mA
600
V
1.0 mA
1.0 V
1.5 V
30
40
50
10
2.5 µs
0.15 µs
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51598TS (KOTO) TA-1043 No.5817-1/4