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2SC5347AE-TD-E Datasheet, PDF (1/8 Pages) Sanyo Semicon Device – High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifi er Applications
Ordering number : ENA1087A
2SC5347A
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
2SC5347A High-Frequency Semi-Power Output Stage,
Features
Low-Noise Medium Output Amplifier Applications
• High-frequency medium output amplification (VCE=5V, IC=50mA)
: fT=4.7GHz typ (f=1GHz)
: ⏐S21e⏐2=8dB typ (f=1GHz)
: NF=1.8dB typ (f=1GHz)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
Unit
20
V
12
V
2
V
150 mA
1.3
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
2SC5347AE-TD-E
2SC5347AF-TD-E
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
1
2
3
0.4
0.4
0.5
1.5
3.0
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
TD
RANK
Electrical Connection
2
1
3
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90512 TKIM/D0308AB MSIM TC-00001778 No. A1087-1/8