2SC5291 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – High-Voltage Switching Applications

Ordering number : ENN5282A
2SC5291
NPN Epitaxial Planar Silicon Transistor
2SC5291
High-Voltage Switching Applications
Features
• Adoption of FBET, MBIT processes.
• Large current capacity.
• Can be provided in taping.
• 9.5mm onboard mounting height.
Package Dimensions
unit : mm
2084B
[2SC5291]
4.5
10.5
1.9
2.6
1.2
1.4
1.2
1.6
0.5
123
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
2.5
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=120V, IE=0
VEB=4V, IC=0
2.5
min
0.5
1 : Emitter
2 : Collector
3 : Base
SANYO : FLP
Ratings
Unit
180
V
160
V
6
V
1.5
A
2.5
A
300 mA
1.5
W
150
°C
--55 to +150
°C
Ratings
Unit
typ
max
1.0
µA
1.0
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12201 TS IM TA-0376 No.5282-1/4