2SC5227A Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – VHF to UHF Wide-Band Low-Noise Amplifier Applications

Ordering number : ENA1063
2SC5227A
SANYO Semiconductors
DATA SHEET
2SC5227A
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Wide-Band Low-Noise
Amplifier Applications
Features
• _Low-noise
: NF=1.0dB typ (f=1GHz).
• _{High gain}
: ⏐S21e⏐²=12dB typ (f=1GHz).
• _{High cut-off frequency : fT=7GHz typ.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
Conditions
VCB=10V, IE=0A
VEB=1V, IC=0A
VCE=5V, IC=20mA
* : The 2SC5227A is classified by 20mA hFE as follows :
Marking
LN3
LN4
LN5
Rank
3
4
5
hFE
60 to 120
90 to 180
135 to 270
Ratings
Unit
20
V
10
V
2
V
70 mA
200 mW
150
°C
--55 to +150
°C
min
60*
Ratings
Unit
typ
max
1.0
μA
10
μA
270*
Continued on next page.
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
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51408AB TI IM TC-00001342 No. A1063-1/6