2SC4673 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – UHF Low-Noise Amp, Wide-Band Amp Applications

Ordering number : EN3927
NPN Epitaxial Planar Silicon Transistor
2SC4673
UHF Low-Noise Amp, Wide-Band Amp
Applications
Features
• Low noise figure : NF=1.5dB typ (f=0.9GHz).
• High power gain : S2le²=8.0dB typ (f=0.9GHz).
• High cutoff frequency : fT=4.5GHz typ.
Package Dimensions
unit: mm
2038-PCP
[2SC4673]
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Base Current
Collector Dissipation
VCBO
VCEO
VEBO
IC
IB
PC
Mounted on ceramic board
(250mm²Ã—0.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
E : Emitter
C : Collector
B : Base
SANYO : PCP
Ratings
Unit
20
V
12
V
3
V
100 mA
30 mA
400 mW
800 mW
150
°C
–55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
ICBO
IEBO
hFE
fT
Cob
Cre
S2le²
NF
VCB=12V, IE=0
VEB=2V, IC=0
VCE=10V, IC=20mA
VCE=10V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
VCE=10V, IC=20mA, f=0.9GHz
VCE=10V, IC=5mA, f=0.9GHz
Ratings
Unit
min typ max
1.0 µA
10 µA
40*
200*
4.5
GHz
1.1
pF
0.75
pF
8.0
dB
1.5 3.0 dB
* : The 2SC4673 is classified by 20mA hFE as follows :
40 C 80 60 D 120 100 E 200
Making : CD
hFE rank : C, D, E
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
11697YK (KOTO) 8-6790 No.3927-1/4