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2SC4460M-SV Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications
Ordering number : EN7692A
2SC4460M-SV
SANYO Semiconductors
DATA SHEET
2SC4460M-SV NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
Features
• High breakdown voltage, High reliability.
• High-speed switching.
• Wide ASO.
• Adoption of MBIT process.
• Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤300µs, duty cycle≤10%
Tc=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=500V, IE=0A
VEB=5V, IC=0A
Ratings
Unit
1000
V
500
V
7
V
15
A
25
A
4
A
3
W
55
W
150
°C
--55 to +150
°C
Ratings
Unit
min
typ
max
10
µA
10
µA
Continued on next page.
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
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82907 TI IM TC-00000845 / 61504KB TS IM TA-100751 No.7692-1/4