2SA2112_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – High Current Switching Applications

Ordering number : EN7379A
2SA2112
SANYO Semiconductors
DATA SHEET
2SA2112 ^{PNP Epitaxial Planar Silicon Transistor}
High Current Switching Applications
Applicaitons
• _{DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes}
Features
• _{Adoption of MBIT process}
• _{Low collector-to-emitter saturation voltage}
• _{Large current capacity}
• _{High-speed switching}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Storage Temperature
Tstg
Package Dimensions
unit : mm (typ)
7540-001
2.5
6.9
1.45
1.05 ^2SA2112-AN
Conditions
Ratings
Unit
--50
V
--50
V
--50
V
--6
V
--3
A
--6
A
--600 mA
1
W
150
°C
--55 to +150
°C
Product & Package Information
• Package : NMP(Taping)
• JEITA, JEDEC : SC-71
• Minimum Packing Quantity : 2,500 pcs./box
Marking(NMP(Taping)) Electrical Connection
0.6
0.5
0.9
A2112
LOT No.
2
3
1
1
2
2.54
3
0.45
1 : Emitter
2 : Collector
2.54 ^{3 : Base}
SANYO : NMP(Taping)
http://www.sanyosemi.com/en/network/
82912 TKIM TC-00002806/N2503 TSIM TA-3749 No.7379-1/7