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2SA1709_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – High-Voltage Switching Applications
Ordering number : EN3096A
2SA1709 / 2SC4489
SANYO Semiconductors
DATA SHEET
2SA1709/2SC4489 PNP/NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
Features
• Adoption of FBET, MBIT processes
• Fast switching speed
• High breakdown voltage, large current capacity
( )2SA1709
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature
Tstg
Package Dimensions
unit : mm (typ)
7540-001
2.5
6.9
1.45
1.05 2SA1709S-AN
2SA1709T-AN
2SC4489S-AN
2SC4489T-AN
Conditions
Ratings
Unit
(--)120
V
(--)100
V
(--)6
V
(--)2
A
(--)3
A
1
W
150
°C
--55 to +150
°C
Product & Package Information
• Package : NMP(Taping)
• JEITA, JEDEC : SC-71
• Minimum Packing Quantity : 2,500 pcs./box
Marking(NMP(Taping))
A1709
C4489
0.6
0.5
0.9
RANK
LOT No.
RANK
LOT No.
1
2
2.54
3
0.45
1 : Emitter
2 : Collector
2.54 3 : Base
SANYO : NMP(Taping)
Electrical Connection
2
2
3
3
1
2SA1709
1
2SC4489
http://www.sanyosemi.com/en/network/
82912 TKIM TC-00002803/40804TN(PC)/5169MO, TS No.3096-1/7