2SA1708_09 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – High-Voltage Switching Applications

Ordering number : EN3094A
2SA1708 / 2SC4488
SANYO Semiconductors
DATA SHEET
2SA1708 / 2SC4488
Features
• _{Adoption of FBET, MBIT processes.}
• High breakdown voltage, large current capacity.
• Fast switching speed.
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching Applications
Specifications ( ) : 2SA1708
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
Unit
(--)120
V
(--)100
V
(--)6
V
(--)1
A
(--)2
A
1
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=(--)100V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(--)100mA
VCE=(--)10V, IC=(--)100mA
VCB=(--)10V, f=1MHz
* : The 2SA1708 / 2SC4488 are classified by 100mA hFE as follws:
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
min
100*
Ratings
Unit
typ
max
(--)100
nA
(--)100
nA
400*
120
MHz
(13)8.5
pF
Continued on next page.
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the performance, characteristics, and functions of the described products in the independent state, and are not
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22509EA MS IM TC-00001859 / 93003TN (KT)/83098HA(KT)/4249MO, TS No.3094-1/5