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2SA1707_12 Datasheet, PDF (1/8 Pages) Sanyo Semicon Device – High-Current Switching Applications
Ordering number : EN3093A
2SA1707 / 2SC4487
SANYO Semiconductors
DATA SHEET
2SA1707 / 2SC4487 PNP/NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Features
• Adoption of FBET, MBIT processes
• Low collector-to-emitter saturation voltage
• Large current capacity, wide ASO
• Fast switching speed
( )2SA1707
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature
Tstg
Package Dimensions
unit : mm (typ)
7540-001
2.5
6.9
1.45
1.05 2SA1707S-AN
2SA1707T-AN
2SC4487S-AN
2SC4487T-AN
Conditions
Ratings
Unit
(--)60
V
(--)50
V
(--)6
V
(--)3
A
(--)6
A
1
W
150
°C
--55 to +150
°C
Product & Package Information
• Package : NMP(Taping)
• JEITA, JEDEC : SC-71
• Minimum Packing Quantity : 2,500 pcs./box
Marking(NMP(Taping))
A1707
C4487
0.6
0.5
0.9
RANK
LOT No.
RANK
LOT No.
1
2
2.54
3
0.45
1 : Emitter
2 : Collector
2.54 3 : Base
SANYO : NMP(Taping)
Electrical Connection
2
2
3
3
1
2SA1707
1
2SC4487
http://www.sanyosemi.com/en/network/
82912 TKIM TC-00002801/93003TN (KT)/83098HA(KT)/6299MO, TS No.3093-1/8