2SA1417_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – High-Voltage Switching Applications

Ordering number : EN2006D
2SA1417 / 2SC3647
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistor
2SA1417/2SC3647 High-Voltage Switching
Applications
Features
• _{Adoption of FBET, MBIT processes}
• _{High breakdown voltage and large current capacity}
• _{Fast switching speed}
• _{Ultrasmall size making it easy to provide high-density small-sized hybrid ICs}
Specifications ^{( ) : 2SA1417}
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Conditions
When mounted on ceramic substrate (250mm²Ã—0.8mm)
Ratings
Unit
(--)120
V
(--)100
V
(--)6
V
(--)2
A
(--)3
A
500 mW
1.5
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
2SA1417S-TD-E
2SA1417T-TD-E
1.5 _{2SC3647S-TD-E}
2SC3647T-TD-E
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
1
2
3
0.4
0.4
0.5
1.5
3.0
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
TD
Marking
RANK
RANK
2SA1417
2SC3647
Electrical Connection
2
2
1
1
3
2SA1417
3
2SC3647
http://www.sanyosemi.com/en/network/
90512 TKIM/22006EA MSIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2006-1/7