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2SA1416_12 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – High-Voltage Switching Applications
Ordering number : EN2005C
2SA1416 / 2SC3646
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistor
2SA1416/2SC3646 High-Voltage Switching
Applications
Features
• Adoption of FBET, MBIT processes
• High breakdown voltage and large current capacity
• Fast switching speed
• Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
Specifications ( ) : 2SA1416
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Conditions
When mounted on ceramic substrate (250mm2×0.8mm)
Ratings
Unit
(--)120
V
(--)100
V
(--)6
V
(--)1
A
(--)2
A
500 mW
1.3
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
2SA1416S-TD-E
2SA1416T-TD-E
1.5 2SC3646S-TD-E
2SC3646T-TD-E
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
1
2
3
0.4
0.4
0.5
1.5
3.0
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
TD
Marking
RANK
RANK
2SA1416
2SC3646
Electrical Connection
2
2
1
1
3
2SA1416
3
2SC3646
http://www.sanyosemi.com/en/network/
82212 TKIM/31010EA TKIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2005-1/7