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2SA1011P Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – High-Voltage Switching, AF Power Amp,100W Output Predriver Applications
Ordering number : EN8522
2SA1011P / 2SC2344P
SANYO Semiconductors
DATA SHEET
2SA1011P / 2SC2344P
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching, AF Power Amp,
100W Output Predriver Applications
Specifications ( ) : 2SA1011P
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VBE
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=(--)120V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(--)300mA
VCE=(--)10V, IC=(--)50mA
VCB=(--)10V, f=1MHz
VCE=(--)5A, IC=(--)10mA
IC=(--)500mA, IB=(--)50mA
IC=(--)1mA, IE=0A
IC=(--)1mA, RBE=∞
IE=(--)1mA, IC=0A
* : The 2SA1011P/2SC2344P are classified by 300mA hFE as follows :
Rank
D
E
hFE
60 to 120
100 to 200
Ratings
Unit
(--)180
V
(--)160
V
(--)6
V
(--)1.5
A
(--)3
A
30
W
150
°C
--55 to +150
°C
min
60*
(--)180
(--)160
(--)6
Ratings
Unit
typ
max
(--)10 µA
(--)10 µA
200*
100
MHz
(30)23
pF
(--)1.5
V
(--0.5)0.3
V
V
V
V
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62707DA TI IM TC-00000697 No.8522-1/4