1SV298 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Type Attenuator Applications

Ordering number :EN5224A
1SV298
Silicon Epitaxial PIN Diode
π Type Attenuator Applications
Features
· Composite type with 3 diodes contained in the CP
package currently in use, improving the mounting
efficiency greatly.
· Small interterminal capacitance (C=0.23pF typ).
· Small forward series resistance (rs=7.5Ω typ).
Package Dimensions
unit:mm
1269
[1SV298]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Reverse Voltage
Forward Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VR
IF
P
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Reverse Voltage
Reverse Current
Forward Voltage
Interterminal Capacitance
Series Resistance
VR
IR=10µA
IR
VR=50V
VF
IF=50mA
C
VR=50V, f=1MHz
rs
IF=10µA, f=100MHz
IF=10mA, f=100MHz
Note : The specifications shown above are for each individual diode.
· Marking:QV
Electrical Connection
1:Cathode, Cathode
2:Anode
3:Anode, Cathode
4:Anode
1:Cathode, Cathode
2:Anode
3:Anode, Cathode
4:Anode
SANYO:CP4
Ratings
Unit
50 V
50 mA
150 mW
125 ˚C
–55 to +125 ˚C
Ratings
Unit
min typ max
50
V
0.1 µA
0.975 1.15 V
0.23
pF
2400
Ω
6.5
7.5 10.0 Ω
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/D2695GI/82595GI (KOTO) TA-0683, TA-0520 No.5224-1/3